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We report new experimental benefits about the section-matching Houses of the BaGa4Se7 crystal for harmonic technology of the Nd:YAG laser-pumped AgGaS2 optical parametric oscillator (OPO) and also a CO2 laser…
The deforming vibrations of Ga–O–Ga bonds inside the defect crystal create two IR absorption bands Found all-around 665 cm−one, akin to the crystal residual absorption. The end result can help us to eliminate the residual absorption and improve the crystal high-quality.
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β-BaGa4Se7: a promising IR nonlinear optical crystal built by predictable structural rearrangement†
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BaGa4Se7’s phonon composition displays a comparatively reduced phonon Vitality cap and also a phonon hole. Figure 1a exhibits the calculated phonon band dispersions along the high-symmetry Instructions of Brillouin zone for BaGa4Se7. The inset gives the definitions of higher-symmetry factors during the momentum House. The blue arrows exhibit the momentum path corresponding to the dispersion shown. The dispersion curves give the most phonon Electrical power about 300 cm−one and also a phonon hole all-around 150 cm−one; each the best of phonon bands and also the phonon hole are obvious in Raman spectra (see Fig. three by way of example) at corresponding Electrical power places. We hope the BaGa4Se7 crystal is gentle and fragile as the result of this type of small phonon Electrical power cap. The phonon hole all-around 150 cm−one is about 45 cm−one broad. Determine 1b displays the phonon DOS for BaGa4Se7. The purple, inexperienced, and blue shadowed parts are for Ba, Ga, Se atom phonon DOS, respectively. The Ba atom only has phonon distribution throughout the very low Electrical power aspect slightly below the phonon gap. It ensures that the Ba atom doesn’t go at all while in the phonon modes above the hole. As an illustration, the 180.8 and 230.5 cm−1 modes demonstrate no actions of Ba atoms in Fig. two. All of the higher band phonon modes satisfy the problem of a continue to Ba atom.
′�?, which has a frequency of 295 cm−1, is attributed to the stretching vibration of Ga–Se bonds. The 2-phonon absorption of your 295 cm−1 phonon corresponds towards the crystal IR absorption edge, as opposed to the residual absorption peak. Density functional theory computations demonstrate which the residual absorption from the BGSe crystal originates from your OSe defect (Se is substituted by O).